Title :
A new lateral MOS-gated thyristor with controlling base-current
Author :
Sugawara, S. ; Aoki, K. ; Yamaguchi, H. ; Sasaki, K. ; Sasaki, T. ; Fujisaki, H.
Author_Institution :
Dept. of Electr. Eng., Tohoku Gakuin Univ., Miyagi, Japan
Abstract :
A new lateral MOS-gated thyristor, called the Base-Current-Controlled Thyristor, is described. This device is designed so that most holes at the on-stage reach the P base through the floating P/sup +/ region adjacent to the P base and the on-state MOSFET. At the turn-off stage, the interruption of the hole current to the P base due to switching off the above MOSFET occurs simultaneously with the conventional turn-off operation. The concept of this device is verified experimentally by using the fabricated lateral device with the external MOSFET. This device exhibits a better trade-off relation between the on-state voltage and the turn-off time compared uith the conventional MOS-gated thyristor.
Keywords :
MOS-controlled thyristors; power semiconductor switches; 1.08 mus; 1.81 mus; base-current-controlled thyristor; external MOSFET; floating P/sup +/ region; hole current interruption; lateral MOS-gated thyristor; on-state MOSFET; on-state voltage; switching; trade-off relation; turn-off stage; turn-off time; Anodes; Cathodes; Electrodes; Epitaxial layers; Insulated gate bipolar transistors; MOSFET circuits; Power integrated circuits; Punching; Thyristors; Voltage;
Journal_Title :
Electron Device Letters, IEEE
