DocumentCode
1252136
Title
Asymmetric Aging and Workload Sensitive Bias Temperature Instability Sensors
Author
Min Chen ; Reddy, Veerababu ; Krishnan, Sridhar ; Srinivasan, V. ; Yu Cao
Author_Institution
Texas Instrum., Dallas, TX, USA
Volume
29
Issue
5
fYear
2012
Firstpage
18
Lastpage
26
Abstract
Asymmetric aging under different workload profiles requires on-chip aging sensors to be sensitive to signal edge degradation. The authors in this paper present a 45-nm on-chip aging sensor that directly monitors circuit performance degradation during dynamic operation.
Keywords
ageing; circuit reliability; temperature sensors; asymmetric aging; circuit performance degradation; on-chip aging sensors; signal edge degradation; size 45 nm; workload sensitive bias temperature instability sensors; Aging; Circuit testing; Degradation; Delays; Reliability; Sensors; System-on-a-chip; BTI; RO; TDC; aging sensor; asymetric aging; circuit activity; circuit delay; on-chip test strucutrue; relibility; variations; workload;
fLanguage
English
Journal_Title
Design & Test of Computers, IEEE
Publisher
ieee
ISSN
0740-7475
Type
jour
DOI
10.1109/MDT.2012.2210381
Filename
6249796
Link To Document