• DocumentCode
    1252136
  • Title

    Asymmetric Aging and Workload Sensitive Bias Temperature Instability Sensors

  • Author

    Min Chen ; Reddy, Veerababu ; Krishnan, Sridhar ; Srinivasan, V. ; Yu Cao

  • Author_Institution
    Texas Instrum., Dallas, TX, USA
  • Volume
    29
  • Issue
    5
  • fYear
    2012
  • Firstpage
    18
  • Lastpage
    26
  • Abstract
    Asymmetric aging under different workload profiles requires on-chip aging sensors to be sensitive to signal edge degradation. The authors in this paper present a 45-nm on-chip aging sensor that directly monitors circuit performance degradation during dynamic operation.
  • Keywords
    ageing; circuit reliability; temperature sensors; asymmetric aging; circuit performance degradation; on-chip aging sensors; signal edge degradation; size 45 nm; workload sensitive bias temperature instability sensors; Aging; Circuit testing; Degradation; Delays; Reliability; Sensors; System-on-a-chip; BTI; RO; TDC; aging sensor; asymetric aging; circuit activity; circuit delay; on-chip test strucutrue; relibility; variations; workload;
  • fLanguage
    English
  • Journal_Title
    Design & Test of Computers, IEEE
  • Publisher
    ieee
  • ISSN
    0740-7475
  • Type

    jour

  • DOI
    10.1109/MDT.2012.2210381
  • Filename
    6249796