DocumentCode
1252299
Title
Ozone sensing using In2O3-modified Ga2 O3 thin films
Author
Frank, J. ; Fleischer, M. ; Zimmer, M. ; Meixner, H.
Author_Institution
Corporate Technol., Siemens AG, Munich, Germany
Volume
1
Issue
4
fYear
2001
fDate
12/1/2001 12:00:00 AM
Firstpage
318
Lastpage
321
Abstract
It is shown that at elevated temperatures the conductance of an In 2O3-modified Ga2O3 thin film depends significantly and reversibly on the ozone concentration in the ambient air. This ozone sensitivity is much greater than with pure Ga 2O3 or In2O3 thin films, respectively. The ozone sensitivity of the In2O3-modified Ga2O3 thin film is characterized by an impressive selectivity, and is maximal at an operation temperature of about 600°C. The cross sensitivities to other gases present in ambient conditions are small compared to the ozone sensitivity, thus opening the way to use this system for ambient ozone monitoring. The results are discussed using an electron injection model
Keywords
ceramics; gallium compounds; gas sensors; indium compounds; ozone; semiconductor materials; semiconductor thin films; 600 degC; In2O3-Ga2O3; ambient conditions; ambient monitoring; electron injection model; gas sensor; operation temperature; ozone concentration; ozone sensitivity; selectivity; semiconducting ceramic thin films; surface modification; Ceramics; Conducting materials; Conductivity; Gases; Semiconductivity; Semiconductor thin films; Sputtering; Temperature sensors; Thin film sensors; Transistors;
fLanguage
English
Journal_Title
Sensors Journal, IEEE
Publisher
ieee
ISSN
1530-437X
Type
jour
DOI
10.1109/7361.983471
Filename
983471
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