DocumentCode
1252331
Title
High frequency GaInP/GaAs heterostructure-emitter bipolar transistor with low offset voltage
Author
Hai-Jiang Ou ; Yue-Fei Yang ; Yang, E.S.
Author_Institution
Dept. of Electr. Eng., Columbia Univ., New York, NY
Volume
33
Issue
8
fYear
1997
fDate
4/10/1997 12:00:00 AM
Firstpage
714
Lastpage
716
Abstract
A carbon doped GaInP/GaAs heterostructure-emitter bipolar transistor (HEBT) grown by MOCVD is reported with high RF performance. A cutoff frequency of 50 GHz and maximum oscillation frequency of 90 GHz were obtained for the device. An offset voltage as low as 90 mV was achieved. It is shown that the GaInP/GaAs HEBT with a high frequency and a low offset voltage is a good candidate for low battery power device applications
Keywords
III-V semiconductors; chemical vapour deposition; gallium arsenide; gallium compounds; indium compounds; microwave bipolar transistors; p-n heterojunctions; 50 GHz; 90 GHz; 90 mV; GaInP-GaAs; MOCVD; RF performance; cutoff frequency; heterostructure-emitter bipolar transistor; low battery power device applications; maximum oscillation frequency; offset voltage;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970485
Filename
591121
Link To Document