Title :
Deep states associated with stacking faults in silicon
Author :
Lahiji, G.R. ; Hamilton, Blaine ; Peaker, A.R.
Author_Institution :
Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst of Sci. & Technol.
fDate :
10/13/1988 12:00:00 AM
Abstract :
The authors have studied the electrical behaviour of stacking faults in silicon, and show conclusively that the electron emission properties of the deep states associated with these defects are modified by decoration with gold. The emission properties and concentration of the deep state associated with the decorated defect changes systematically with the amount of gold present
Keywords :
deep level transient spectroscopy; deep levels; electrical conductivity of crystalline semiconductors and insulators; elemental semiconductors; silicon; stacking faults; DLTS; Si:Au; decorated defect; deep level transient spectroscopy; deep states; electrical behaviour; electron emission properties; stacking faults;
Journal_Title :
Electronics Letters
