• DocumentCode
    12527
  • Title

    A High-Temperature SiC Three-Phase AC - DC Converter Design for > 100/spl deg/C Ambient Temperature

  • Author

    Ruxi Wang ; Boroyevich, Dushan ; Puqi Ning ; Zhiqiang Wang ; Fei Wang ; Mattavelli, Paolo ; Ngo, Khai D. T. ; Rajashekara, Kaushik

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
  • Volume
    28
  • Issue
    1
  • fYear
    2013
  • fDate
    Jan. 2013
  • Firstpage
    555
  • Lastpage
    572
  • Abstract
    High-temperature (HT) converters have gained importance in industrial applications where the converters operate in a harsh environment, such as in hybrid electrical vehicles, aviation, and deep-earth petroleum exploration. These environments require the converter to have not only HT semiconductor devices (made of SiC or GaN), but also reliable HT packaging, HT gate drives, and HT control electronics. This paper describes a detailed design process for an HT SiC three-phase PWM rectifier that can operate at ambient temperatures above 100°C. SiC HT planar structure packaging is designed for the main semiconductor devices, and an edge-triggered HT gate drive is also proposed to drive the designed power module. The system is designed to make use of available HT components, including the passive components, silicon-on-insulator chips, and auxiliary components. Finally, a 1.4 kW lab prototype is tested in a harsh environment for verification.
  • Keywords
    AC-DC power convertors; PWM rectifiers; driver circuits; elemental semiconductors; high-temperature electronics; semiconductor device packaging; silicon compounds; silicon-on-insulator; HT control electronics; HT gate drives; HT packaging; HT planar structure packaging; HT semiconductor devices; HT three-phase PWM rectifier design process; SiC; ambient temperature; aviation; deep-earth petroleum exploration; edge-triggered HT gate drive; high-temperature converters; high-temperature three-phase AC-DC converter design; hybrid electrical vehicles; passive components; power 1.4 kW; power module; silicon-on-insulator chips; JFETs; Lead; Logic gates; Materials; Multichip modules; Silicon carbide; Harsh environment; high-temperature (HT) converter; silicon carbide JFET; silicon-on-insulator (SOI) technology;
  • fLanguage
    English
  • Journal_Title
    Power Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-8993
  • Type

    jour

  • DOI
    10.1109/TPEL.2012.2199131
  • Filename
    6199991