Title :
A High-Temperature SiC Three-Phase AC - DC Converter Design for > 100/spl deg/C Ambient Temperature
Author :
Ruxi Wang ; Boroyevich, Dushan ; Puqi Ning ; Zhiqiang Wang ; Fei Wang ; Mattavelli, Paolo ; Ngo, Khai D. T. ; Rajashekara, Kaushik
Author_Institution :
Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
High-temperature (HT) converters have gained importance in industrial applications where the converters operate in a harsh environment, such as in hybrid electrical vehicles, aviation, and deep-earth petroleum exploration. These environments require the converter to have not only HT semiconductor devices (made of SiC or GaN), but also reliable HT packaging, HT gate drives, and HT control electronics. This paper describes a detailed design process for an HT SiC three-phase PWM rectifier that can operate at ambient temperatures above 100°C. SiC HT planar structure packaging is designed for the main semiconductor devices, and an edge-triggered HT gate drive is also proposed to drive the designed power module. The system is designed to make use of available HT components, including the passive components, silicon-on-insulator chips, and auxiliary components. Finally, a 1.4 kW lab prototype is tested in a harsh environment for verification.
Keywords :
AC-DC power convertors; PWM rectifiers; driver circuits; elemental semiconductors; high-temperature electronics; semiconductor device packaging; silicon compounds; silicon-on-insulator; HT control electronics; HT gate drives; HT packaging; HT planar structure packaging; HT semiconductor devices; HT three-phase PWM rectifier design process; SiC; ambient temperature; aviation; deep-earth petroleum exploration; edge-triggered HT gate drive; high-temperature converters; high-temperature three-phase AC-DC converter design; hybrid electrical vehicles; passive components; power 1.4 kW; power module; silicon-on-insulator chips; JFETs; Lead; Logic gates; Materials; Multichip modules; Silicon carbide; Harsh environment; high-temperature (HT) converter; silicon carbide JFET; silicon-on-insulator (SOI) technology;
Journal_Title :
Power Electronics, IEEE Transactions on
DOI :
10.1109/TPEL.2012.2199131