• DocumentCode
    1253028
  • Title

    High temperature 1 Gbit/s data transmission using λ=835 nm GaAs VCSELs

  • Author

    Schnitzer, P. ; Grabherr, M. ; Reiner, G. ; Weigl, B. ; Ebeling, K.J.

  • Author_Institution
    Dept. of Optoelectron., Ulm Univ.
  • Volume
    33
  • Issue
    7
  • fYear
    1997
  • fDate
    3/27/1997 12:00:00 AM
  • Firstpage
    595
  • Lastpage
    597
  • Abstract
    Using laterally oxidised VCSELs, the authors demonstrate 1 Gbit/s pseudo-random data transmission at 10-11 bit-error rate over the temperature range 20-100°C, applying constant 2.5 mA bias current and fixed 0.5Vpp voltage swing for modulation
  • Keywords
    III-V semiconductors; data communication; gallium arsenide; gradient index optics; optical communication equipment; optical fibre communication; semiconductor lasers; surface emitting lasers; 1 Gbit/s; 2.5 mA; 20 to 100 degC; 835 nm; GaAs; III-V semiconductors; bit-error rate; constant bias current; fixed voltage swing; laterally oxidised VCSELs; pseudo-random data transmission;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970363
  • Filename
    591384
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1253028