Title :
Type-II interband quantum cascade laser at 3.8 μm
Author :
Chih-Hsiang Lin ; Yang, R.Q. ; Zhang, Dejing ; Murry, S.J. ; Pei, S.S. ; Allerman, A.A. ; Kurtz, Sarah R.
Author_Institution :
Space Vacuum Epitaxy Center, Houston Univ., TX
fDate :
3/27/1997 12:00:00 AM
Abstract :
The authors have demonstrated the first stimulated emission from Sb-based type-II quantum cascade configuration. Laser emission at 3.8 μm has been observed for temperatures up to 170 K. The device was composed of 20 periods of active regions separated by digitally graded quantum-well injection regions
Keywords :
III-V semiconductors; aluminium compounds; energy gap; indium compounds; quantum well lasers; 3.8 micrometre; AlSb-InAs-InGaSb; III-V semiconductors; active regions; digitally graded quantum-well injection regions; laser stimulated emission; mid-IR lasers; type-II interband quantum cascade laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970421
