Breakthroughs in Semiconductor Lasers

Author

Crowley, Mark T. ; Kovanis, Vassilios ; Lester, Luke F.

Author_Institution

Centerfor High Technol. Mater., Univ. of New Mexico, Albuquerque, NM, USA

Volume

4

Issue

2

fYear

2012

fDate

4/1/2012 12:00:00 AM

Firstpage

565

Lastpage

569

Abstract

The latest breakthroughs on the frontiers of semiconductor laser capabilities are presented. Achievements including the impressive advances in high-speed lasers with low pJ/bit energy consumption, high-power vertical external cavity surface emitting lasers (VECSELs), advances in Ill-nitrides, record-high temperature operation quantum dot lasers, the longest wavelength Type-I quantum well lasers to date, and the fascinating field of nanolasers with ultralow volume and threshold are all discussed.

Keywords

III-V semiconductors; energy consumption; laser cavity resonators; nanophotonics; quantum dot lasers; quantum well lasers; surface emitting lasers; III-nitrides; VECSEL; energy consumption; high-power vertical external cavity surface emitting lasers; high-speed lasers; longest wavelength type-I quantum well lasers; nanolasers; semiconductor lasers; temperature operation quantum dot lasers; ultralow threshold; ultralow volume; Cavity resonators; Laser modes; Quantum cascade lasers; Quantum dot lasers; Vertical cavity surface emitting lasers; III-nitrides; Mid-infrared (IR) lasers; nanolasers; quantum dots (QDs); semiconductor lasers; vertical cavity surface emitting lasers (VCSELs); vertical external cavity surface emitting lasers (VECSELs);

fLanguage

English

Journal_Title

Photonics Journal, IEEE

Publisher

ieee

ISSN

1943-0655

Type

jour

DOI

10.1109/JPHOT.2012.2190499

Filename

6251844