Title :
MOS magnetic current sensor based on standard CMOS process
Author :
Tan-Fu Lei ; Yu-Chung Huang ; Chung-Len Lee
fDate :
3/27/1997 12:00:00 AM
Abstract :
A novel current sensor is proposed. The current sensor consists of one MOS magnetic sensor and a flat coil in an industrial CMOS process. An experimental device demonstrated a sensitivity of 8.4 mV/A
Keywords :
MIS devices; MOS magnetic current sensor; flat coil; microsensors; sensitivity; standard CMOS process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970375
