Title :
Reflection-type normally-on two-wavelength modulator
Author :
Chia-Ming Tsai ; Chien-Ping Lee
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu
fDate :
3/27/1997 12:00:00 AM
Abstract :
The authors demonstrate a novel reflection-type normally-on two-wavelength modulator by combining two quantum-well structures with different operating wavelengths in a coupled cavity structure. Reflection spectra show simultaneous modulations at wavelengths of 856 and 886 nm in the device consisting of GaAs/AlGaAs and InGaAs/AlGaAs quantum wells for each wavelength. Under separate applied voltages, maximum reflectivity changes of 70 and 54% were obtained for the two wavelengths. To the best of the authors´ knowledge, this is the first two-wavelength reflection modulator ever reported
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical communication equipment; optical modulation; semiconductor quantum wells; 856 nm; 886 nm; GaAs-AlGaAs; III-V semiconductors; InGaAs-AlGaAs; coupled cavity structure; maximum reflectivity changes; operating wavelengths; quantum-well structures; reflection-type normally-on two-wavelength modulator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970405
