DocumentCode
1253104
Title
Reflection-type normally-on two-wavelength modulator
Author
Chia-Ming Tsai ; Chien-Ping Lee
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu
Volume
33
Issue
7
fYear
1997
fDate
3/27/1997 12:00:00 AM
Firstpage
611
Lastpage
613
Abstract
The authors demonstrate a novel reflection-type normally-on two-wavelength modulator by combining two quantum-well structures with different operating wavelengths in a coupled cavity structure. Reflection spectra show simultaneous modulations at wavelengths of 856 and 886 nm in the device consisting of GaAs/AlGaAs and InGaAs/AlGaAs quantum wells for each wavelength. Under separate applied voltages, maximum reflectivity changes of 70 and 54% were obtained for the two wavelengths. To the best of the authors´ knowledge, this is the first two-wavelength reflection modulator ever reported
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical communication equipment; optical modulation; semiconductor quantum wells; 856 nm; 886 nm; GaAs-AlGaAs; III-V semiconductors; InGaAs-AlGaAs; coupled cavity structure; maximum reflectivity changes; operating wavelengths; quantum-well structures; reflection-type normally-on two-wavelength modulator;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970405
Filename
591395
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