Title :
Electromechanically Induced GHz Rate Optical Frequency Modulation in Silicon
Author :
Tallur, S. ; Bhave, S.A.
Author_Institution :
Department of Electrical and Computer Engineering, OxideMEMS Lab, Cornell University, Ithaca, NY, USA
Abstract :
We present a monolithic silicon acousto-optic frequency modulator (AOFM) operating at 1.09 GHz. Direct spectroscopy of the modulated laser power shows asymmetric sidebands, which indicate coincident amplitude modulation and frequency modulation (FM). Employing mechanical levers to enhance the displacement of the optical resonator resulted in greater than 67X improvement in the optomechanical FM factor over earlier reported numbers for silicon nanobeams.
Keywords :
Amplitude modulation; Frequency modulation; Optical modulation; Optical resonators; Resonant frequency; Silicon optomechanics; optical frequency modulation (FM);
Journal_Title :
Photonics Journal, IEEE
DOI :
10.1109/JPHOT.2012.2210701
