Title :
Very high current density pseudomorphic double channel In0.49 Ga0.51P/In0.3Ga0.7As/GaAs HEMT
Author_Institution :
Div. of Optoelctron. Mater. & Devices, Opto-Electron. & Syst. Labs., Hsinchu
fDate :
3/27/1997 12:00:00 AM
Abstract :
The authors report the results of a 0.7 μm gate-length pseudomorphic double channel In0.49Ga0.51P/In0.3Ga0.7 As/GaAs HEMT for communication systems applications. The devices achieved a very high saturation current density of 801 mA/mm and a maximum peak transconductance of 256 mS/mm. The maximum gate-drain breakdown voltage measured was 7.8 V
Keywords :
III-V semiconductors; current density; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor device reliability; -7.8 V; 0.7 micron; In0.49Ga0.51P-In0.3Ga0.7 As-GaAs; communication systems applications; current density; gate-drain breakdown voltage; microwave transistors; peak transconductance; pseudomorphic double channel HEMT; saturation current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970386
