Title :
8×8 GaN Schottky barrier photodiode array for visible-blind imaging
Author :
Lim, B.W. ; Gangopadhyay, Samantak ; Wang, J.W. ; Osinsky, A. ; Chen, Qian ; Anwar, M.Z. ; Khan, Muhammad Asad
Author_Institution :
APA Opt. Inc., Blaine, MN
fDate :
3/27/1997 12:00:00 AM
Abstract :
The fabrication and characterisation of an 8×8 Schottky barrier photodiode array on GaN, with pixel size of 200×200 μm, are reported. This array shows an average peak response of 0.05 A/W and sharp cutoff at 360 nm. Decay time measurements reveal the response to be PC-limited with a time constant of 50 ns. The visible-blind UV-imaging capability of the GaN photodiode array is also demonstrated for the first time
Keywords :
III-V semiconductors; Schottky diodes; gallium compounds; photodiodes; ultraviolet detectors; 200 micron; 360 nm; 50 ns; GaN; Schottky barrier photodiode array; UV-imaging capability; average peak response; decay time measurements; pixel size; time constant; visible-blind imaging;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970377
