DocumentCode :
1253229
Title :
Collector-up InGaP/GaAs-double heterojunction bipolar transistors with high fmax
Author :
Henkel, Achim ; Delage, S.L. ; diForte-Poisson, M.-A. ; Chartier, E. ; Blanck, H. ; Hartnagel, H.L.
Author_Institution :
Lab. Central de Recherches, Thomson-CSF, Orsay
Volume :
33
Issue :
7
fYear :
1997
fDate :
3/27/1997 12:00:00 AM
Firstpage :
634
Lastpage :
636
Abstract :
The first fabrication and RF characterisation of an InGaP/GaAs double heterojunction bipolar transistor in collector-up configuration is reported. Boron implantation is used to avoid electron injection into the extrinsic base regions. The InGaP collector offers fmax=115 GHz and a high breakdown voltage (BVceo=27V)
Keywords :
III-V semiconductors; electric breakdown; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device reliability; 115 GHz; 27 V; III-V semiconductors; InGaP-GaAs; RF characterisation; breakdown voltage; collector-up configuration; double heterojunction bipolar transistors; extrinsic base regions; microwave bipolar transistors;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19970398
Filename :
591424
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1253229
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