Title :
Mapping high-pressure Bridgman Cd0.8Zn0.2Te
Author :
Schieber, M. ; Hermon, H. ; James, R.B. ; Lund, J. ; Antolak, A. ; Morse, D. ; Kolesnikov, N.N. ; Ivanov, Yu.N. ; Goorsky, M.S. ; Van Scyoc, J.M. ; Yoon, H. ; Toney, J. ; Schlesinger, T.E. ; Doty, F.P. ; Cozzatti, J.P.D.
Author_Institution :
Sandia Nat. Labs., Livermore, CA, USA
fDate :
12/1/1997 12:00:00 AM
Abstract :
Single crystals of Cd0.8Zn0.2Te grown at the Institute of Solid State Physics, Chernogolovka, Russia, by the high-pressure vertical Bridgman method (HPVB) were mapped using X-ray fluorescence (XRF), X-ray diffraction (XRD), photoluminescence (PL), and leakage current measurements, most of the Russian samples which we refer to as p-type CZT were more uniform in Zn composition than U.S. commercially produced material. The Russian material had a poorer crystallinity and, in the best case, could only count nuclear radiation. Differences in the material properties between Russian (p-type) and U.S. (n-type) material will be described
Keywords :
II-VI semiconductors; X-ray diffraction; X-ray fluorescence analysis; cadmium compounds; crystal growth from melt; electrical resistivity; gamma-ray detection; leakage currents; photoluminescence; semiconductor counters; semiconductor growth; zinc compounds; Cd0.8Zn0.2Te; X-ray diffraction; X-ray fluorescence; Zn composition; crystallinity; high-pressure Bridgman Cd0.8Zn0.2Te; high-pressure vertical Bridgman method; leakage current measurements; nuclear radiation; p-type CZT; photoluminescence; single crystals; Crystalline materials; Crystals; Fluorescence; Photoluminescence; Physics; Solid state circuits; Tellurium; X-ray diffraction; X-ray scattering; Zinc;
Journal_Title :
Nuclear Science, IEEE Transactions on
