Title :
Microwave performance of 0.25 μm doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures
Author :
Chen, Qian ; Gaska, R. ; Khan, Muhammad Asad ; Shur, Michael S. ; Adesida, I. ; Burm, J. ; Schaff, W.J. ; Eastman, L.F.
Author_Institution :
APA Opt. Inc., Blaine, MN
fDate :
3/27/1997 12:00:00 AM
Abstract :
The authors report the DC and microwave performance of a 0.25 μm gate doped channel Al0.14Ga0.86N/GaN HFETs exhibiting a cutoff frequency of 37.5 GHz and a maximum frequency of oscillations of 80.4 GHz. The calculations of the Fermi level position and comparison with the expected conduction band discontinuity confirm that the channel in these transistors is doped. DC and microwave characteristics of these devices do not change much with temperature up to at least 200 and 90°C, respectively
Keywords :
Fermi level; III-V semiconductors; aluminium compounds; doping profiles; gallium compounds; microwave field effect transistors; 0 to 200 degC; 0.25 micron; 37.5 GHz; 80.4 GHz; Fermi level position; GaN-AlGaN; III-V semiconductors; conduction band discontinuity; cutoff frequency; heterostructure field effect transistor; maximum frequency of oscillations; microwave performance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970403
