• DocumentCode
    1253319
  • Title

    Hole velocity overshoot in partially strain compensated Si0.793Ge0.2C0.007 inversion layers [MOSFETs]

  • Author

    Kar, G.S. ; Maikap, S. ; Banerjee, S.K. ; Ray, S.K.

  • Author_Institution
    Dept. of Phys. & Meteorol., Indian Inst. of Technol., Kharagpur, India
  • Volume
    38
  • Issue
    3
  • fYear
    2002
  • fDate
    1/31/2002 12:00:00 AM
  • Firstpage
    141
  • Lastpage
    142
  • Abstract
    A velocity-field study of holes in partially strain compensated Si 0.793Ge0.2C0.007 p-MOSFET devices with channel lengths ranging from 0.8 to 10 μm has been carried out. A very high effective hole velocity, 1.1 × 107 cm/s attributed to the onset of velocity overshoot in SiGeC p-MOSFETs, is reported. Significant improvement in effective hole velocity of Si0.793Ge0.2C0.007, compared to that of a binary Si0.8Ge0.2 device, is observed. this being due to C-induced strain stabilisation in the metastable SiGe layer
  • Keywords
    Ge-Si alloys; MOSFET; germanium compounds; internal stresses; inversion layers; semiconductor device measurement; semiconductor materials; silicon compounds; 0.8 to 10 micron; C-induced strain stabilisation; Si0.793Ge0.2C0.007; SiGeC p-MOSFETs; channel lengths; high effective hole velocity; hole velocity; hole velocity overshoot; holes; metastable SiGe layer; partially strain compensated inversion layers; partially strain compensated p-MOSFET devices; velocity overshoot; velocity-field study;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020095
  • Filename
    984417
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1253319