Title :
Monolithic transformer with underlying deep silicon-oxide block
Author :
Jiang, H. ; Tien, N.C.
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
fDate :
1/31/2002 12:00:00 AM
Abstract :
A method to improve the performance of on-chip monolithic transformers is presented. A transformer with a 20 μm-deep silicon-oxide block beneath has a self-resonant frequency of 9.75 GHz and a quality factor of 10.1. These values are 72 and 124% better, respectively, than those of the same device built on 4.1 μm-thick silicon oxide
Keywords :
MMIC; Q-factor; elemental semiconductors; high-frequency transformers; silicon; silicon compounds; 20 micron; 9.75 GHz; Si-SiO2; monolithic transformer; on-chip monolithic transformers; quality factor; self-resonant frequency; underlying deep silicon-oxide block;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020085
