• DocumentCode
    1253329
  • Title

    Monolithic transformer with underlying deep silicon-oxide block

  • Author

    Jiang, H. ; Tien, N.C.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
  • Volume
    38
  • Issue
    3
  • fYear
    2002
  • fDate
    1/31/2002 12:00:00 AM
  • Firstpage
    142
  • Lastpage
    144
  • Abstract
    A method to improve the performance of on-chip monolithic transformers is presented. A transformer with a 20 μm-deep silicon-oxide block beneath has a self-resonant frequency of 9.75 GHz and a quality factor of 10.1. These values are 72 and 124% better, respectively, than those of the same device built on 4.1 μm-thick silicon oxide
  • Keywords
    MMIC; Q-factor; elemental semiconductors; high-frequency transformers; silicon; silicon compounds; 20 micron; 9.75 GHz; Si-SiO2; monolithic transformer; on-chip monolithic transformers; quality factor; self-resonant frequency; underlying deep silicon-oxide block;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020085
  • Filename
    984418
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1253329