• DocumentCode
    1253718
  • Title

    Low threshold InGaAs/AlGaAs lasers grown on (111)B GaAs substrate

  • Author

    Khoo, E.A. ; Pabla, A.S. ; Woodhead, J. ; David, J.P.R. ; Grey, R. ; Rees, G.J.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Sheffield Univ.
  • Volume
    33
  • Issue
    11
  • fYear
    1997
  • fDate
    5/22/1997 12:00:00 AM
  • Firstpage
    957
  • Lastpage
    958
  • Abstract
    The authors report the lowest threshold current density to date of a strained InGaAs/GaAs/AlGaAs single quantum well separate confinement heterostructure laser grown on a (111)B GaAs substrate. A Jth value as low as 87 A/cm2 has been obtained for a 2500 μm long broad area laser. The internal quantum efficiency is estimated to be 82% and the internal loss is 5.5 cm-1
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; (111)B GaAs substrate; 82 percent; GaAs; InGaAs-AlGaAs; broad area laser; internal loss; internal quantum efficiency; strained InGaAs/GaAs/AlGaAs SQW-SCH laser; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970615
  • Filename
    591572
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1253718