DocumentCode
1253757
Title
Wide temperature range linear DFB lasers with very low threshold current
Author
Chen, Tiffani R. ; Chen, P.C. ; Ungar, J. ; Paslaski, J. ; Oh, Sung-Min ; Luong, Huy ; Bar-Chaim, N.
Author_Institution
Ortel Corp., Alhambra, CA
Volume
33
Issue
11
fYear
1997
fDate
5/22/1997 12:00:00 AM
Firstpage
963
Lastpage
965
Abstract
Singlemode operation between -60 and +110°C in strained multiquantum well InGaAsP/InP DFB lasers is demonstrated. The lasers display very low threshold current, high quantum efficiency, low distortion and low noise, which make them desirable for digital as well as analogue applications
Keywords
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; quantum well lasers; -60 to 110 C; InGaAsP-InP; analogue applications; digital applications; distortion; noise; quantum efficiency; single mode operation; strained multiquantum well linear DFB laser; temperature range; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970619
Filename
591580
Link To Document