Title :
Low-noise current optoelectronic integrated receiver with internal equalizer for gigabit-per-second long-wavelength optical communications
Author :
Yano, Hiroshi ; Aga, Keigo ; Kamei, Hidenori ; Sasaki, Goro ; Hayashi, Hideki
Author_Institution :
Sumitomo Electr. Ind. Ltd., Yokohama, Japan
fDate :
9/1/1990 12:00:00 AM
Abstract :
An equalizer, which is essential in order to improve the sensitivity of receiver optoelectronic integrated circuits (OEICs) at a gigabit-per-second data rate, has been monolithically integrated on an InP substrate with a p-i-n photodiode and a high-impedance high-electron-mobility-transistor (HEMT) amplifier. The receiver operated up to 1.6 Gb/s and showed low noise current characteristics. The minimum noise current is less than 4 pA/√Hz. The sensitivity calculated from the noise current characteristics is -28.4 dBm for 1.6-Gb/s signals. The receiver chip, which was assembled on a ceramic mount, exhibited a sensitivity of -30.4 dBm at 1.2 Gb/s and 1.3-μm wavelength. The performance is as good as those of receiver OEICs with an external equalizer and sufficient for practical use in gigabit-per-second optical communication system
Keywords :
amplifiers; equalisers; field effect integrated circuits; high electron mobility transistors; integrated optoelectronics; optical communication equipment; p-i-n diodes; photodiodes; receivers; 1.2 Gbit/s; 1.3 micron; 1.6 Gbit/s; HEMT amplifier; InP substrate; ceramic mount; gigabit-per-second data rate; high electron mobility transistor amplifier; internal equalizer; long-wavelength optical communications; noise current characteristics; p-i-n photodiode; receiver OEICs; receiver optoelectronic integrated circuits; sensitivity; wavelength; Assembly; Ceramics; Equalizers; HEMTs; Indium phosphide; Integrated circuit noise; Monolithic integrated circuits; Optical amplifiers; Optical receivers; PIN photodiodes;
Journal_Title :
Lightwave Technology, Journal of
