• DocumentCode
    1253931
  • Title

    Improvement of fT by dipole doping at the collector heterojunction in InP double HBTs

  • Author

    McAlister, S.P. ; McKinnon, W.R. ; Driad, Rachid

  • Author_Institution
    Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont.
  • Volume
    33
  • Issue
    11
  • fYear
    1997
  • fDate
    5/22/1997 12:00:00 AM
  • Firstpage
    991
  • Lastpage
    993
  • Abstract
    The authors show clearly how dipole doping at the collector heterojunction in an InP/lnGaAs double heterojunction bipolar transistor improves device performance. Specifically, both fT and fmax are increased and the DC current-blocking is reduced. Also the DC switching characteristics, seen in devices with abrupt undoped InGaAs/InP collector heterojunctions, can almost be eliminated by using the dipole doping at that interface
  • Keywords
    III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor doping; DC current-blocking; DC switching characteristics; InP-InGaAs; collector heterojunction; device performance; dipole doping; double HBTs;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970644
  • Filename
    591610
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1253931