Title :
Broad-band power amplifier using dielectric photonic bandgap structure
Author :
Radisic, Vesna ; Qian, Yongxi ; Itoh, Tatsuo
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fDate :
1/1/1998 12:00:00 AM
Abstract :
Two class AB GaAs field-effect transistor (FET) power amplifiers have been designed and fabricated in the 4.4-4.8 GHz range. In the first case, a dielectric PBG line was incorporated in the design to tune the second harmonic. In the second case, a 50-Ω line is used with no harmonic tuning. The PBG structure allows broad-band harmonic tuning and is inexpensive to fabricate. A 5% improvement in power-added efficiency was achieved at the design frequency of 4.5 GHz, in both simulation and measurement
Keywords :
III-V semiconductors; circuit tuning; gallium arsenide; harmonics; microwave power amplifiers; photonic band gap; wideband amplifiers; 4.4 to 4.8 GHz; 50 ohm line; GaAs; GaAs FET power amplifiers; broadband harmonic tuning; broadband power amplifier; class AB; dielectric PBG line; dielectric photonic bandgap structure; field-effect transistor; second harmonic tuning; Capacitors; Dielectrics; FETs; Finite difference methods; Frequency; Microstrip; Photonic band gap; Power amplifiers; Time domain analysis; Tuning;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
