Title :
Photonic microwave characteristics and modeling of an Al0.3 Ga0.7As/GaAs/In0.13Ga0.87As double heterostructure pseudomorphic HEMT
Author :
Song, S.H. ; Kim, D.M. ; Kim, H.J. ; Kim, S.H. ; Kang, K.N. ; Nathan, M.I.
Author_Institution :
Sch. of Electr. Eng., Kookmin Univ., Seoul, South Korea
fDate :
1/1/1998 12:00:00 AM
Abstract :
Electrical characteristics of a photonically controlled n-channel Al0.3Ga0.7As/GaAs/In0.13Ga0.87 As double heterostructure pseudomorphic HEMT (PHEMT) is reported. Experimental results show a high optical sensitivity in the drain saturation current, the transconductance fT, and fmax at the optical power density Popt=78 mW/cm2. We also proposed a new optoelectronic equivalent circuit model, which has photonically generated gate capacitances (Cgs,opt and Cgd,opt) and transconductance (gm,opt), for accurate description of DC and microwave performance of PHEMT´s under optical control, and verified the accuracy of the proposed model with measured and extracted scattering parameters from the equivalent photonic microwave model
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; capacitance; equivalent circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor device models; Al0.3Ga0.7As-GaAs-In0.13Ga 0.87As; Al0.3Ga0.7As/GaAs/In0.13Ga 0.87As; HEMT modeling; double heterostructure PHEMT; drain saturation current; electrical characteristics; gate capacitances; high optical sensitivity; n-channel device; optical control; optoelectronic equivalent circuit model; photonic microwave characteristics; photonically controlled HEMT; pseudomorphic HEMT; scattering parameters; transconductance; Electric variables; Equivalent circuits; Gallium arsenide; Optical control; Optical saturation; Optical scattering; Optical sensors; Optimized production technology; PHEMTs; Transconductance;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
