Coplanar integrated mixers for 77-GHz automotive applications

Author

Verweyen, L. ; Massler, H. ; Neumann, M. ; Schaper, U. ; Haydl, W.H.

Author_Institution

Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany

Volume

8

Issue

1

fYear

1998

Firstpage

38

Lastpage

40

Abstract

For integration in receivers at 77 GHz, three passive mixers, a balanced diode mixer, a single ended and a balanced resistive mixer, as well as an active single-ended gate mixer have been realized in coplanar 0.15-μm PM-HEMT technology on GaAs. The passive mixers achieved conversion losses of about 9 dB. The resistive mixers required an LO power of only 3 dBm and the diode mixer 10 dBm for optimum conversion. The gate mixer obtained a conversion gain of 1 dB for an LO power of 6 dBm, but showed higher sensitivity to the IF load.

Keywords

HEMT integrated circuits; III-V semiconductors; automotive electronics; coplanar waveguides; field effect MIMIC; gallium arsenide; losses; millimetre wave mixers; 0.15 micron; 1 dB; 77 GHz; 9 dB; GaAs; LO power; MMIC mixers; PM-HEMT technology; active single-ended gate mixer; automotive applications; balanced diode mixer; balanced resistive mixer; conversion losses; coplanar integrated mixers; passive mixers; pseudomorphic HEMTs; sensitivity; Automotive applications; Coplanar waveguides; FETs; Gallium arsenide; HEMTs; MMICs; Mixers; P-i-n diodes; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.650982

Filename

650982