Title :
Coplanar integrated mixers for 77-GHz automotive applications
Author :
Verweyen, L. ; Massler, H. ; Neumann, M. ; Schaper, U. ; Haydl, W.H.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
Abstract :
For integration in receivers at 77 GHz, three passive mixers, a balanced diode mixer, a single ended and a balanced resistive mixer, as well as an active single-ended gate mixer have been realized in coplanar 0.15-μm PM-HEMT technology on GaAs. The passive mixers achieved conversion losses of about 9 dB. The resistive mixers required an LO power of only 3 dBm and the diode mixer 10 dBm for optimum conversion. The gate mixer obtained a conversion gain of 1 dB for an LO power of 6 dBm, but showed higher sensitivity to the IF load.
Keywords :
HEMT integrated circuits; III-V semiconductors; automotive electronics; coplanar waveguides; field effect MIMIC; gallium arsenide; losses; millimetre wave mixers; 0.15 micron; 1 dB; 77 GHz; 9 dB; GaAs; LO power; MMIC mixers; PM-HEMT technology; active single-ended gate mixer; automotive applications; balanced diode mixer; balanced resistive mixer; conversion losses; coplanar integrated mixers; passive mixers; pseudomorphic HEMTs; sensitivity; Automotive applications; Coplanar waveguides; FETs; Gallium arsenide; HEMTs; MMICs; Mixers; P-i-n diodes; Radio frequency; Radiofrequency amplifiers;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
