Title :
Modeling the bending of probes used in semiconductor industry
Author :
Comeau, Alain R. ; Nadeau, Normand
Author_Institution :
Mitel Semicond., Bromont, Que., Canada
fDate :
5/1/1991 12:00:00 AM
Abstract :
An analytical model for the bending of probes used in the semiconductor industry is presented. It is shown that tip sliding distance is twice as large as was previously believed. This difference is shown to be caused by the beam curvature, which increases the angle between the tip and the vertical and pushes the tip forward. The model uses the probe shape and the material elastic properties to estimate the beam curvature. Tip sliding distance, force, and tip angle variance are calculated as functions of beam dimensions and overdrive. The model is in agreement with sliding distance measured by scanning electron microscopy
Keywords :
bending; probes; scanning electron microscope examination of materials; semiconductor technology; analytical model; beam curvature; beam dimensions; bending of probes; elastic properties; modeling; probe shape; scanning electron microscopy; semiconductor industry; tip angle variance; tip force; tip sliding distance; Analytical models; Contact resistance; Elasticity; Electrical resistance measurement; Electronics industry; Planarization; Probes; Scanning electron microscopy; Semiconductor materials; Shape;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
