Title :
Low-divergence single-mode ridge waveguide diode lasers
Author :
Harding, C.M. ; Chen, Yu Christine
Author_Institution :
McDonnell Douglas Electron. Syst. Co., Elmsford, NY, USA
fDate :
3/1/1991 12:00:00 AM
Abstract :
Ridge waveguide laser diodes of a GaAs-AlGaAs separate-confinement graded-index monolithically stacked triple-quantum-well structure have been fabricated. Chemically assisted ion beam etching (CAIBE) was used to etch a 4- mu m-wide mesa which serves as the waveguide for the device. Results for 4- mu m-wide by 600- mu m-long optically coated devices are presented. Single-longitudinal mode, CW output power in excess of 90 mW and a far-field divergence of 21 degrees *3.5 degrees are demonstrated.<>
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; laser modes; optical waveguides; optical workshop techniques; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 4 micron; 600 micron; 90 mW; CW output power; GaAs-AlGaAs; MOCVD; chemical vapour deposition; far-field divergence; graded-index; ion beam etching; mesa; monolithically stacked; optically coated devices; semiconductor; separate-confinement; single longitudinal mode lasing; single-mode ridge waveguide diode lasers; triple-quantum-well; Diode lasers; Distributed Bragg reflectors; Distributed feedback devices; Etching; Laser feedback; Optical devices; Optical feedback; Optical waveguides; Power generation; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
