Low-divergence single-mode ridge waveguide diode lasers

Author

Harding, C.M. ; Chen, Yu Christine

Author_Institution

McDonnell Douglas Electron. Syst. Co., Elmsford, NY, USA

Volume

3

Issue

3

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

199

Lastpage

201

Abstract

Ridge waveguide laser diodes of a GaAs-AlGaAs separate-confinement graded-index monolithically stacked triple-quantum-well structure have been fabricated. Chemically assisted ion beam etching (CAIBE) was used to etch a 4- mu m-wide mesa which serves as the waveguide for the device. Results for 4- mu m-wide by 600- mu m-long optically coated devices are presented. Single-longitudinal mode, CW output power in excess of 90 mW and a far-field divergence of 21 degrees *3.5 degrees are demonstrated.<>

Keywords

III-V semiconductors; aluminium compounds; etching; gallium arsenide; laser modes; optical waveguides; optical workshop techniques; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 4 micron; 600 micron; 90 mW; CW output power; GaAs-AlGaAs; MOCVD; chemical vapour deposition; far-field divergence; graded-index; ion beam etching; mesa; monolithically stacked; optically coated devices; semiconductor; separate-confinement; single longitudinal mode lasing; single-mode ridge waveguide diode lasers; triple-quantum-well; Diode lasers; Distributed Bragg reflectors; Distributed feedback devices; Etching; Laser feedback; Optical devices; Optical feedback; Optical waveguides; Power generation; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.79752

Filename

79752