Title :
AlGaAs grating surface-emitting beam deflector with ridge structure
Author :
Nagata, Hisao ; Komaba, Nobuyuki ; Yamashita, Ken
fDate :
3/1/1991 12:00:00 AM
Abstract :
A ridge-waveguide-type AlGaAs grating surface-emitting beam deflector was fabricated. The deflection is controlled by carrier-induced refractive-index change of the waveguide. The maximum deflection angle change is about 0.6 degrees , which corresponds to about ten resolvable spots. The temperature raising of the active layer was estimated in comparison with the characteristics for direct and pulsed current operation. It was 6.5 degrees C for the injection current (DC) of 20 mA.<>
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; electro-optical devices; gallium arsenide; integrated optics; optical deflectors; 20 mA; 6.5 degC; AlGaAs; active layer; carrier-induced refractive-index change; injection current; maximum deflection angle change; pulsed current; resolvable spots; ridge-waveguide-type AlGaAs grating surface-emitting beam deflector; semiconductors; Etching; Gratings; Laser beams; Optical modulation; Optical refraction; Optical surface waves; Optical switches; Optical variables control; Optical waveguides; Refractive index;
Journal_Title :
Photonics Technology Letters, IEEE
