Title :
Switching operation in a GaInAs-InP MQW integrated-twin-guide (ITG) optical switch
Author :
Kohtoku, Masaki ; Baba, Satoshi ; Arai, Shigehisa ; Suematsu, Yasuharu
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
fDate :
3/1/1991 12:00:00 AM
Abstract :
Switching operation in a GaInAs-InP MQW (multiple-quantum-well) three-dimensional directional coupler switch at the wavelength of 1.57 mu m was achieved with a short-length device (L=170 mu m approximately=L/sub c/). The device structure fabrication is based on a high-mesa-shaped integrated-twin-guide structure. Switching characteristics are reported, showing that the refractive index variation in the quantum well is about +0.68% with very low absorption loss increase.<>
Keywords :
III-V semiconductors; directional couplers; gallium arsenide; indium compounds; integrated optics; optical communication equipment; optical couplers; optical switches; 1.57 micron; 170 micron; GaInAs-InP; MQW; directional coupler switch; high-mesa-shaped; integrated-twin-guide; low absorption loss increase; multiple-quantum-well; optical switch; refractive index variation; Communication switching; Directional couplers; High speed optical techniques; Optical buffering; Optical modulation; Optical refraction; Optical switches; Optical variables control; Optical waveguides; Quantum well devices;
Journal_Title :
Photonics Technology Letters, IEEE
