DocumentCode
1254465
Title
Quantum transistors and circuits break through the barriers
Author
Capasso, Federico ; Sen, Satyaki ; Lunardi, L.M. ; Cho, Andrew Y.
Author_Institution
AT&T Bell Lab., Murray Hill, NJ, USA
Volume
7
Issue
3
fYear
1991
fDate
5/1/1991 12:00:00 AM
Firstpage
18
Lastpage
25
Abstract
Resonant tunneling diodes and transistors, which are ´vertical´ quantum devices, in which the current flows perpendicular to the layers instead of along them, are discussed. The operation of both devices is explained. Various types of resonant tunneling transistor are examined, with particular attention to multistate devices. Applications to frequency multipliers, parity generators, and analog-to-digital converters are presented.<>
Keywords
analogue-digital conversion; frequency multipliers; resonant tunnelling devices; tunnel diodes; analog-to-digital converters; frequency multipliers; multistate devices; parity generators; resonant tunneling transistor; resonant tunnelling diodes; Atomic beams; Circuits; Electrons; Epitaxial growth; Light emitting diodes; Molecular beam epitaxial growth; Molecular beams; P-n junctions; Photonic band gap; Resonant tunneling devices;
fLanguage
English
Journal_Title
Circuits and Devices Magazine, IEEE
Publisher
ieee
ISSN
8755-3996
Type
jour
DOI
10.1109/101.79792
Filename
79792
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