Thermal impedance of VCSELs with AlO/sub x/-GaAs DBRs

Author

MacDougal, M.H. ; Geske, J. ; Chao-Kun Lin ; Bond, A.E. ; Dapkus, P.D.

Author_Institution

Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA

Volume

10

Issue

1

fYear

1998

Firstpage

15

Lastpage

17

Abstract

The authors have measured the thermal impedance of vertical-cavity surface-emitting lasers (VCSELs) with oxide/GaAs DBRs and shown that it is comparable to that of VCSELs with all-semiconductor DBRs. A VCSEL with an 8-μm oxide aperture shows a thermal impedance of 2.8/spl deg/C/mW. By varying the aperture size, the thermal conductance of the material below the active area is 0.255 W/cm/spl deg/C. These results demonstrate that the oxide is not a major barrier to heat transport out of the active region.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; quantum well lasers; thermal conductivity; 8 mum; AlO-GaAs; AlO/sub x/-GaAs DBR; VCSEL; active area; active region; aperture size; heat transport; oxide aperture; oxide/GaAs DBR; thermal conductance; thermal impedance; vertical-cavity surface-emitting lasers; Apertures; Distributed Bragg reflectors; Impedance measurement; Mirrors; Surface emitting lasers; Surface impedance; Temperature; Thermal resistance; Vertical cavity surface emitting lasers; Wavelength measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.651085

Filename

651085