Strain-compensated InGa(As)P-InAsP active regions for 1.3-μm wavelength lasers

Author

Dries, J.C. ; Gokhale, M.R. ; Uenohara, H. ; Forrest, S.R.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ, USA

Volume

10

Issue

1

fYear

1998

Firstpage

42

Lastpage

44

Abstract

The demonstration of an optimized strain compensated multiple-quantum-well (MQW) active region for use in 1.3-μm wavelength lasers is described. Utilizing narrow bandgap tensile-strained InGaAsP instead of wide bandgap InGaP barriers in strain-compensated lasers, we observe a reduction in threshold current density (Jth) from 675 to 310 A/cm² and in T₀ from 75 K to 65 K for 2-mm long seven quantum-well devices. Additionally, the lowest reported Jth for MBE grown 1.3-μm wavelength lasers of 120 A/cm² for single-quantum-well (SQW) 45-mm-long lasers was attained.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser variables measurement; molecular beam epitaxial growth; photoluminescence; quantum well lasers; 1.3 mum; 2 mm; 4.5 mm; 75 to 65 K; InGaAsP-InAsP; InGaAsP-InAsP active regions; InGaP-InAsP; InGaP-InAsP active regions; MBE grown lasers; narrow bandgap tensile-strained InGaAsP; optimized strain compensated multiple-quantum-well active region; quantum-well devices; single-quantum-well laser; strain-compensated lasers; threshold current density; wide bandgap InGaP barriers; Capacitive sensors; Conducting materials; Optical materials; Photonic band gap; Quantum well devices; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.651096

Filename

651096