Title :
Ultrafast transport dynamics of p-i-n photodetectors under high-power illumination
Author :
Sun, Chi-Kuang ; Tan, I-Hsing ; Bowers, John E.
Author_Institution :
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
We studied ultrafast transport dynamics of highspeed p-i-n photodetectors under high illumination using an electrooptic sampling technique. Under high illumination, saturation nonlinearities were found to be dominated by a space-charge-screening effect. A transient forward external current was also observed, which was attributed to an underdamped plasma oscillation. The external bias required to compensate these nonlinear effects increased with increased illumination.
Keywords :
carrier mobility; high-speed optical techniques; nonlinear optics; optical communication equipment; photodetectors; shielding; electrooptic sampling; external bias; high illumination; high-power illumination; highspeed p-i-n photodetectors; nonlinear effects; p-i-n photodetectors; saturation nonlinearities; space-charge-screening effect; transient forward external current; ultrafast transport dynamics; underdamped plasma oscillation; Absorption; Current measurement; Electrooptic modulators; Electrooptical waveguides; Lighting; PIN photodiodes; Photodetectors; Pulse measurements; Sampling methods; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
