1.32-μm GaInNAs-GaAs laser with a low threshold current density

Author

Peng, C.S. ; Jouhti, T. ; Laukkanen, P. ; Pavelescu, E.-M. ; Konttinen, J. ; Li, Wenyuan ; Pessa, M.

Author_Institution

Optoelectronics Res. Centre, Tampere Univ. of Technol., Finland

Volume

14

Issue

3

fYear

2002

fDate

3/1/2002 12:00:00 AM

Firstpage

275

Lastpage

277

Abstract

We report on a recent development of diluted nitride laser diodes operating at the wavelengths around 1.3 μm. The lasers grown by molecular beam epitaxy and processed into 20-μm-wide ridge waveguide structures, mounted episides up on subcarriers, exhibit a threshold current density as low as 563 A/cm², slope efficiency of 0.2 W/A per facet, light power up to 40-mW continuous-wave, and characteristic temperature of 97-133 K.

Keywords

III-V semiconductors; current density; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well lasers; waveguide lasers; 32 micron; 40 mW; 97 to 133 K; GaInNAs-GaAs; UV-photolithography; characteristic temperature; diluted nitride laser diodes; molecular beam epitaxy; ridge waveguide structures; room-temperature photoluminescence; semiconductor lasers; single-quantum-well lasers; slope efficiency; temperature dependence; threshold current density; wet chemical etching; Gallium arsenide; Laser modes; Molecular beam epitaxial growth; Optical transmitters; Plasma temperature; Power lasers; Semiconductor lasers; Stimulated emission; Threshold current; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.986784

Filename

986784