• DocumentCode
    1255086
  • Title

    In situ calibration of stress chips

  • Author

    Bastawros, Adel F. ; Voloshin, Arkady S.

  • Author_Institution
    Bethlehem Steel Corp., PA, USA
  • Volume
    13
  • Issue
    4
  • fYear
    1990
  • fDate
    12/1/1990 12:00:00 AM
  • Firstpage
    888
  • Lastpage
    892
  • Abstract
    A special test chip having several silicon diffused piezoresistive strain gauges is described that was used to demonstrate an in situ calibration procedure for the gauges. It is based on the use of a high-sensitivity strain measuring technique called Moire interferometry to monitor mechanical strains at the location where the gauges are, thus providing a direct correlation between measured resistance changes of the gauges and actual strains. Many of the limitations and drawbacks of previous calibration techniques have been eliminated by this approach which is direct, simple, and reliable. It is applicable to new as well as existing stress chips
  • Keywords
    calibration; moire fringes; monolithic integrated circuits; packaging; strain gauges; strain measurement; stress measurement; Moire interferometry; Si diffused piezoresistive strain gauges; calibration of stress chips; calibration techniques; high-sensitivity strain measuring technique; in situ calibration procedure; measured resistance changes; mechanical strains; packaged IC stresses; test chip; Calibration; Capacitive sensors; Electrical resistance measurement; Mechanical variables measurement; Piezoresistance; Semiconductor device measurement; Silicon; Strain measurement; Stress; Testing;
  • fLanguage
    English
  • Journal_Title
    Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0148-6411
  • Type

    jour

  • DOI
    10.1109/33.62535
  • Filename
    62535