Title :
Accurately modeling the drain to source current in recessed gate P-HEMT devices
Author :
Fernández, T. ; García, J.A. ; Tazón, A. ; Mediavilla, A. ; Pedro, J.C. ; García, J.L.
Author_Institution :
Dept. Ingenieria de Comunicaciones, Cantabria Univ., Santander, Spain
Abstract :
In this work, a continuous nonlinear model for the I/sub ds/ current source in recessed gate pseudomorphic HEMT heterostructures is proposed. A careful characterization of the DC, pulsed, and small-signal nonlinear distortion behaviour of this predominant nonlinearity has been employed in order to extract the model parameters. Being able to reproduce the current-voltage (I-V) behaviour as well as the higher order derivatives of the transconductance and output conductance, the equation is valid for an accurate control of the critical nonlinear distortion phenomena in HEMT applications. Comparisons between measured and simulated results prove its validity under both static and dynamic conditions for either large- or small-signal operation.
Keywords :
electric current; high electron mobility transistors; microwave field effect transistors; nonlinear distortion; semiconductor device models; I-V behaviour; continuous nonlinear model; current-voltage behaviour; drain to source current; dynamic conditions; higher order derivatives; large-signal operation; model parameters extraction; nonlinear distortion phenomena; output conductance; pseudomorphic HEMT heterostructures; recessed gate P-HEMT devices; small-signal nonlinear distortion behaviour; static conditions; transconductance; Distortion measurement; HEMTs; Intermodulation distortion; MESFETs; Microwave devices; Nonlinear distortion; Nonlinear equations; PHEMTs; Predictive models; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
