Title :
Distributed feedback laser employing buried GaAs/InGaP index-coupled grating
Author :
Stevens, B.J. ; Groom, K.M. ; Roberts, Jeffrey S. ; Fry, P.W. ; Childs, D.T.D. ; Hogg, R.A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Abstract :
The realisation of a GaAs-based distributed feedback laser based upon regrowth of standard AlGaAs upper cladding upon patterned InGaP is presented. Regrowth upon exposed AlGaAs surfaces during its fabrication is avoided. Gratings technology is applied to an In0.17Ga0.83As double quantum well laser emitting at 1 μm and demonstrates ~30 dB sidemode suppression with as-cleaved facets.
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; quantum well lasers; refractive index; semiconductor growth; AlGaAs; GaAs-InGaP; distributed feedback laser; double quantum well laser; index-coupled grating;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.1605
