Title :
High-mobility poly-Si TFTs fabricated on flexible stainless-steel substrates
Author :
Serikawa, T. ; Omata, F.
Author_Institution :
NTT Cyber Space Labs., Tokyo, Japan
Abstract :
High mobility polycrystalline Si thin-film transistors (poly-Si TFTs) are firstly fabricated on flexible stainless-steel substrates 100 μm thick through low-temperature processes where both active Si and gate SiO2 films are deposited by glow-discharge sputtering and the Si films are crystallized by KrF excimer laser irradiation. The gate SiO2 films are sputter-deposited in oxygen atmosphere from the SiO2 target. Resulting poly-Si TFTs show excellent characteristics of mobility of 106 cm2/V/spl middot/s and drain current on-off ratio of as high as 1×106. Thus, the poly-Si TFTs are very promising for realizing novel flat panel displays of lightweight and rugged LCDs and LEDs.
Keywords :
carrier mobility; elemental semiconductors; flat panel displays; laser beam annealing; recrystallisation annealing; silicon; sputter deposition; thin film transistors; 100 mum; 200 C; KrF excimer laser irradiation crystallization; LCD; LED; Si-SiO/sub 2/; SiO/sub 2/ target; active Si films; drain current on-off ratio; flat panel displays; flexible stainless-steel substrates; gate SiO/sub 2/ films; glow-discharge sputtering; high-mobility polysilicon TFT; lightweight rugged displays; low-temperature processes; mobility; sputter-deposited films; Amorphous magnetic materials; Crystallization; Fabrication; Flat panel displays; Glass; Plasma temperature; Semiconductor films; Sputtering; Substrates; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
