A novel gate geometry for the IGBT: the trench planar insulated gate bipolar transistor (TPIGBT)

Author

Spulber, O. ; Narayanan, E.M.S. ; Hardikar, S. ; De Souza, M.M. ; Sweet, M. ; Bose J.V., S.C.

Author_Institution

Emerging Technol. Res. Center, De Montfort Univ., Leicester, UK

Volume

20

Issue

11

fYear

1999

Firstpage

580

Lastpage

582

Abstract

This letter demonstrates a simple way to improve the performance of a planar, fine lithography insulated gate bipolar transistor (IGBT), by incorporating a trench gate between the cathode cells. The results of this new trench-planar IGBT (TPIGBT) clearly demonstrate a significant reduction in the voltage drop without degrading the breakdown voltage. The switching analysis indicates that the TPIGBT represents a good trade-off between planar and trench structures. By separating the trench gate requirements away from the cathode cells, the technology development cycle and costs can be reduced. Furthermore, the reduced cell-width and the shallow trench presents TPIGBT as a cost-effective structure for high-voltage applications.

Keywords

insulated gate bipolar transistors; losses; power transistors; semiconductor device breakdown; semiconductor device measurement; 2 kV; 3 mum; breakdown voltage; cathode cells; cost-effective structure; gate geometry; high-voltage applications; inductive switching energy losses; on-state behavior; planar fine lithography insulated gate bipolar transistor; reduced cell-width; shallow trench; switching analysis; technology development cycle; trench gate; trench planar IGBT; voltage drop; Bipolar transistors; Breakdown voltage; Cathodes; Costs; Degradation; Displays; Doping; Geometry; Insulated gate bipolar transistors; Lithography;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.798050

Filename

798050