Spreading-resistance temperature sensor on silicon-on-insulator

Author

Lai, P.T. ; Bin Li ; Chan, C.L. ; Sin, J.K.O.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, Hong Kong

Volume

20

Issue

11

fYear

1999

Firstpage

589

Lastpage

591

Abstract

A spreading-resistance temperature (SRT) sensor is fabricated on silicon-on-insulator (SOI) substrate and achieves promising characteristics as compared with similar SRT sensor on bulk silicon wafers. Moreover, experimental results show that the maximum operating temperature of thin-film (1.2 μm) SOI SRT sensor can reach 450/spl deg/C, much higher than 350/spl deg/C of thick-film (10 μm) SOI SRT sensor under the same current level. With complete oxide isolation, this sensor structure can be potentially used in low power integrated sensors operating at temperatures as high as 450/spl deg/C.

Keywords

electric sensing devices; high-temperature electronics; isolation technology; low-power electronics; silicon-on-insulator; temperature sensors; 1.2 mum; 450 C; SOI substrate; Si-SiO/sub 2/; complete oxide isolation; low power integrated sensors; maximum operating temperature; sensor structure; spreading-resistance temperature sensor; thin-film SOI SRT sensor; Charge carriers; Circuits; Electrodes; Sensor phenomena and characterization; Silicon compounds; Silicon on insulator technology; Substrates; Temperature sensors; Thermal resistance; Thin film sensors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.798053

Filename

798053