Title :
In situ-doped amorphous Si/sub 0.8/C/sub 0.2/ emitter bipolar transistors
Author :
Orpella, A. ; Bardés, D. ; Alcubilla, R. ; Marsal, L.F. ; Pallarès, J.
Author_Institution :
Dept. d´´Eng. Electron., UPC, Barcelona, Spain
Abstract :
The fabrication and characterization of in situ-doped amorphous Si/sub 0.8/C/sub 0.2/ emitter transistors are presented. Emitter Gummel numbers exceeding 10/sup 14/ s/cm/sup 4/ are reported for the first time in this type of structure. The high values obtained for G/sub E/ are believed to be due to the valance band discontinuity between the Si/sub 0.8/C/sub 0.2/ layer and the crystalline part of the emitter, which effectively blocks the minority carrier injection from the base into the noncrystalline part of the emitter.
Keywords :
amorphous semiconductors; annealing; bipolar transistors; current density; ion implantation; minority carriers; semiconductor device measurement; silicon compounds; valence bands; 100 keV; 15 min; 500 C; 60 min; 870 C; Si/sub 0.8/C/sub 0.2/; amorphous Si/sub 0.8/C/sub 0.2/ emitter bipolar transistors; amorphous crystalline interface; base saturation current density; emitter Gummel numbers; in situ doping; ion implantation energy; minority carrier injection; thermal annealing; valance band discontinuity; Amorphous materials; Annealing; Bipolar transistors; Conductivity; Crystalline materials; Crystallization; Fabrication; Heterojunctions; Silicon; Stimulated emission;
Journal_Title :
Electron Device Letters, IEEE
