Title :
High detectivity GaInAs-InP quantum-well infrared photodetectors grown on Si substrates
Author :
Jiang, J. ; Jelen, C. ; Razeghi, M. ; Brown, G.J.
fDate :
3/1/2002 12:00:00 AM
Abstract :
We report an improvement in the growth and the device performance of GaInAs-InP quantum well infrared photodetectors grown on Si substrates. Material growth techniques, like low-temperature nucleation layers and thick buffer layers were used to grow InP on Si. An in situ thermal cycle annealing technique was used to reduce the threading dislocation density in the InP-on-Si. Detector dark current was reduced 2 orders of magnitude by this method. Record high detectivity of 2.3 × 10/sup 9/ cmHz12//W was obtained for QWIP-on-Si detectors in the 7-9 μm range at 77 K.
Keywords :
III-V semiconductors; MOCVD; annealing; dislocation density; gallium arsenide; indium compounds; infrared detectors; nucleation; quantum well devices; semiconductor growth; semiconductor quantum wells; 7 to 9 micron; 77 K; GaInAs-InP; GaInAs-InP high detectivity QWIPs; GaInAs-InP quantum well infrared photodetectors; Si; Si substrate; dark current; in situ thermal cycle annealing technique; low-pressure metal-organic chemical vapor deposition; low-temperature nucleation layer; material growth techniques; thick buffer layer; threading dislocation density; Annealing; Gallium arsenide; Indium phosphide; Infrared detectors; Photodetectors; Quantum well devices; Quantum wells; Silicon; Substrates; Thermal stresses;
Journal_Title :
Photonics Technology Letters, IEEE
