Frequency-dependent, rectification current in metal-semiconductor-metal detectors

Author

Aliberti, K. ; Shen, H. ; Stead, M. ; Ruff, W. ; Stann, B.

Author_Institution

US Army Res. Lab., Adelphi, MD, USA

Volume

14

Issue

3

fYear

2002

fDate

3/1/2002 12:00:00 AM

Firstpage

381

Lastpage

383

Abstract

Recent experiments show that variation in rectification current with ac-bias frequency exists in metal-semiconductor-metal (MSM) detectors. In this letter, we theoretically study the frequency-dependent rectification current in MSM detectors. Under transient bias voltage the MSM detector shows two of the following transient current responses: 1) a fast one related to the displacement current and 2) a slow one related to the removal of carriers from the detector. Rectification current exists in asymmetric MSM detectors and varies not only with ac voltage and optical power, but also with ac-bias frequency. The theoretical results agree with observed experimental results.

Keywords

electron density; metal-semiconductor-metal structures; photodetectors; rectification; semiconductor device models; transient response; 1-D drift-diffusion model; GaAs; LADAR; MSM detectors; ac-bias frequency; asymmetric MSM detectors; carrier removal; displacement current; electron density; frequency-dependent rectification current; optoelectronic mixers; transient bias voltage; transient current responses; Chirp; Detectors; Fiber lasers; Fingers; Frequency modulation; Laser radar; Nonlinear optics; Optical mixing; Photodetectors; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.986820

Filename

986820