Title :
Thermal characterization of diamond-pressure-bond heat sinking for optically pumped mid-infrared lasers
Author :
Bewley, W.W. ; Felix, C.L. ; Aifer, E.H. ; Stokes, D.W. ; Vurgaftman, I. ; Olafsen, L.J. ; Meyer, J.R. ; Yang, M.J. ; Lee, H.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
11/1/1999 12:00:00 AM
Abstract :
The heat-sinking properties of optically pumped semiconductor lasers mounted by the diamond-pressure-bonding (DPB) technique have been evaluated quantitatively. This method combines epi-side-down mounting with minimal processing and top optical access via pumping through the diamond. By correlating the pump-intensity variation of the emission wavelength with its temperature variation, specific thermal resistances have been determined for DPB-mounted type-II “W” lasers operating in the mid-infrared. Values <2.0 K·cm2/kW were obtained for all temperatures in the range 140-220 K
Keywords :
III-V semiconductors; bonds (chemical); gallium compounds; heat sinks; indium compounds; infrared sources; optical fabrication; optical pumping; quantum well lasers; semiconductor technology; 140 to 220 K; DPB-mounted type-II W lasers; InAs-InGaSb; InAs-InGaSb QW; diamond-pressure-bond heat sinking; diamond-pressure-bonding; emission wavelength; epi-side-down mounting; heat-sinking properties; mid-infrared; minimal processing; optically pumped mid-infrared lasers; optically pumped semiconductor lasers; pump-intensity variation; temperature variation; thermal characterization; thermal resistances; Heat pumps; Heat sinks; Laser excitation; Optical pumping; Optical sensors; Pump lasers; Resistance heating; Semiconductor lasers; Stimulated emission; Thermal resistance;
Journal_Title :
Quantum Electronics, IEEE Journal of
