Thermal characterization of diamond-pressure-bond heat sinking for optically pumped mid-infrared lasers

Author

Bewley, W.W. ; Felix, C.L. ; Aifer, E.H. ; Stokes, D.W. ; Vurgaftman, I. ; Olafsen, L.J. ; Meyer, J.R. ; Yang, M.J. ; Lee, H.

Author_Institution

Naval Res. Lab., Washington, DC, USA

Volume

35

Issue

11

fYear

1999

fDate

11/1/1999 12:00:00 AM

Firstpage

1597

Lastpage

1601

Abstract

The heat-sinking properties of optically pumped semiconductor lasers mounted by the diamond-pressure-bonding (DPB) technique have been evaluated quantitatively. This method combines epi-side-down mounting with minimal processing and top optical access via pumping through the diamond. By correlating the pump-intensity variation of the emission wavelength with its temperature variation, specific thermal resistances have been determined for DPB-mounted type-II “W” lasers operating in the mid-infrared. Values <2.0 K·cm²/kW were obtained for all temperatures in the range 140-220 K

Keywords

III-V semiconductors; bonds (chemical); gallium compounds; heat sinks; indium compounds; infrared sources; optical fabrication; optical pumping; quantum well lasers; semiconductor technology; 140 to 220 K; DPB-mounted type-II W lasers; InAs-InGaSb; InAs-InGaSb QW; diamond-pressure-bond heat sinking; diamond-pressure-bonding; emission wavelength; epi-side-down mounting; heat-sinking properties; mid-infrared; minimal processing; optically pumped mid-infrared lasers; optically pumped semiconductor lasers; pump-intensity variation; temperature variation; thermal characterization; thermal resistances; Heat pumps; Heat sinks; Laser excitation; Optical pumping; Optical sensors; Pump lasers; Resistance heating; Semiconductor lasers; Stimulated emission; Thermal resistance;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.798081

Filename

798081