DocumentCode
1255404
Title
Electrical conduction through Cu2S corrosion films on copper contacts
Author
Jemaa, N.B. ; Queffelec, J.L. ; Travers, D. ; Simon, D.
Author_Institution
Dept. de Phys. Atomique & Moleculaire, Rennes I Univ., France
Volume
13
Issue
4
fYear
1990
fDate
12/1/1990 12:00:00 AM
Firstpage
1063
Lastpage
1067
Abstract
Experimental results concerning electrical conduction through the main Cu2S film grown on copper samples in a reaction chamber (10 p.p.m. of H2S) are reported. The study was based on the analysis of the current-voltage characteristics of the contact point using a fully automatic device which avoids electrical or mechanical breakdowns. It is shown that the contact point has an equivalent circuit composed of a diode, thermoelectric voltage, and contact resistance. The diode parameters resulting from the junction between Cu2S (semiconductor) and copper (metal) are determined. A relationship between reverse current density and the thickness of the film (100 to 5000 Å) is reported to explain and predict film breakdown
Keywords
contact resistance; copper; copper compounds; corrosion; electric breakdown of solids; electrical contacts; electronic conduction in crystalline semiconductor thin films; equivalent circuits; semiconductor materials; semiconductor-metal boundaries; 100 to 5000 Å; Cu; Cu2S corrosion films; H2S; contact point; contact resistance; current-voltage characteristics; diode; electrical conduction; equivalent circuit; film breakdown; reaction chamber; reverse current density; semiconductor film thickness; thermoelectric voltage; Conductive films; Contacts; Copper; Current-voltage characteristics; Electric breakdown; Equivalent circuits; Semiconductor diodes; Semiconductor films; Thermoelectricity; Voltage;
fLanguage
English
Journal_Title
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher
ieee
ISSN
0148-6411
Type
jour
DOI
10.1109/33.62549
Filename
62549
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