• DocumentCode
    1255444
  • Title

    Corrosion criteria for electronic packaging. I. A framework for corrosion of integrated circuits

  • Author

    Hoge, Carl E.

  • Author_Institution
    Western Digital Corp., Irvine, CA, USA
  • Volume
    13
  • Issue
    4
  • fYear
    1990
  • fDate
    12/1/1990 12:00:00 AM
  • Firstpage
    1090
  • Lastpage
    1097
  • Abstract
    A framework for aluminum corrosion is presented which identifies aluminum ion diffusion through a dielectric film as the rate-determining step for the process. A mathematical description of corrosion currents based on this framework is also presented. The activation energy for migration of the ion through the film is shown to be dependent on the activation energy for chemical diffusion and the magnitude of the electric field which is established across the dielectric film as a result of an externally applied bias
  • Keywords
    aluminium; corrosion; integrated circuit technology; metallisation; packaging; Al corrosion; Al3+ ion diffusion; Al3+ ion migration; IC packaging; activation energy; chemical diffusion; corrosion currents; dielectric film; electric field magnitude; electronic packaging; integrated circuit corrosion; rate-determining step; Aluminum; Chemicals; Corrosion; Current measurement; Dielectric films; Electronics packaging; Oxidation; Plastic packaging; Process design; Silicon;
  • fLanguage
    English
  • Journal_Title
    Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0148-6411
  • Type

    jour

  • DOI
    10.1109/33.62553
  • Filename
    62553