Title :
Zero-bias modulation of tapered-thickness waveguide lasers with semi-insulating blocking layer
Author :
Ishikawa, T. ; Kobayashi, H. ; Takeuchi, T. ; Watanabe, T. ; Yamamoto, T. ; Fujii, T. ; Ogita, S. ; Kobayashi, M.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
5/8/1997 12:00:00 AM
Abstract :
The authors demonstrate zero-bias modulation of narrow-beam-divergence tapered-thickness waveguide lasers. The reduction of the parasitic capacitance by introducing a semi-insulating blocking layer made the turn-on delay <1 ns at 85°C, even when no bias voltage was applied. 155.52 Mbit/s penalty-free 40 km transmission under zero-bias conditions was achieved
Keywords :
optical modulation; quantum well lasers; waveguide lasers; 1 ns; 155.52 Mbit/s; 40 km; 85 C; narrow-beam-divergence tapered-thickness waveguide laser; parasitic capacitance; penalty-free data transmission; semi-insulating blocking layer; turn-on delay; zero-bias modulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970606
