DocumentCode
1255542
Title
Comparison of Analytical and Numerical Models for the Optimization of c-Si Solar Cells’ Front Metallization
Author
Greulich, Johannes ; Fellmeth, Tobias ; Glatthaar, Markus ; Biro, Daniel ; Rein, Stefan
Volume
2
Issue
4
fYear
2012
Firstpage
588
Lastpage
591
Abstract
Progress in metallization techniques and emitter formation technologies needs fast and reliable tools for the optimization of the metallization pattern of crystalline silicon solar cells. We present and compare three models and discuss their validity and accuracy for different emitter sheet, finger and contact resistances, and finger widths. All models yield a similar optimal number of metallization fingers for a 156 mm × 156 mm large solar cell and broad plateaus concerning the dependence of the conversion efficiency on the finger spacing, but they differ concerning the absolute value of the fill factor and the dependence of the open-circuit voltage on the number of fingers.
Keywords
contact resistance; elemental semiconductors; metallisation; semiconductor device models; silicon; solar cells; analytical models; c-Si solar cell optimization; contact resistances; crystalline silicon solar cells; emitter formation technologies; emitter sheet; fill factor; finger spacing; finger widths; front metallization; metallization fingers; metallization pattern; numerical models; open-circuit voltage; optimal number; Analytical models; Crystalline materials; Metallization; Numerical models; Photovoltaic cells; Design optimization; metallization; modeling; solar cell;
fLanguage
English
Journal_Title
Photovoltaics, IEEE Journal of
Publisher
ieee
ISSN
2156-3381
Type
jour
DOI
10.1109/JPHOTOV.2012.2206567
Filename
6255752
Link To Document