Sub 10 ps Carrier Response Times in Electroabsorption Modulators Using Quantum Well Offsetting

Author

Daunt, Chris L M ; Cleary, Ciaran S. ; Manning, Robert J. ; Thomas, Kevin ; Young, Robert J. ; Pelucchi, Emanuele ; Corbett, Brian ; Peters, Frank H.

Author_Institution

Tyndall Nat. Inst., Cork, Ireland

Volume

48

Issue

11

fYear

2012

Firstpage

1467

Lastpage

1475

Abstract

Sub 10 ps photocarrier response time in an electroabsoption modulator using a custom epitaxy structure is demonstrated. This design used quantum well offsetting, carbon doping, and valence band discontinuity minimization, to achieve a 3.5 ps response time, when biased at -4.5 V. The quantum well offsetting also allows bandwidth optimization for a specific extinction ratio.

Keywords

electroabsorption; optical modulation; semiconductor quantum wells; valence bands; bandwidth optimization; carbon doping; carrier response times; custom epitaxy structure; electroabsorption modulators; extinction ratio; photocarrier response time; quantum well offsetting; time 10 ps; time 3.5 ps; valence band discontinuity minimization; voltage -4.5 V; Bandwidth; Electron mobility; Epitaxial growth; Extinction ratio; Quantum well devices; Time factors; Carrier transit time; electro-absorption modulator; epitaxy optimization; quantum confined Stark effect;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2012.2210862

Filename

6255754